Analisis Respons Optik Semiconductor Quantum Dot Sistem Three-Level Bertipe V
نویسندگان
چکیده
منابع مشابه
Semiconductor double quantum dot micromaser.
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semicondu...
متن کاملElectron energy level calculation for a three dimensional quantum dot
Abstract: In this paper we consider the rational eigenvalue problem governing the relevant energy levels and wave functions of a three dimensional quantum dot. We present iterative projection methods of Arnoldi and of Jacobi–Davidson type for computing a few eigenpairs of this system. Solving the projected nonlinear eigenvalue problems we take advantage of a minmax characterization of the eigen...
متن کاملNonequilibrium cotunneling through a three-level quantum dot
S. Schmaus,1 V. Koerting,2,* J. Paaske,3 T. S. Jespersen,3 J. Nygård,3 and P. Wölfle1 1Institut für Theorie der Kondensierten Materie, Universität Karlsruhe, D-76128 Karlsruhe, Germany 2Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland 3The Niels Bohr Institute and Nano-Science Center, University of Copenhagen, DK-2100 Copenhagen, Denmark Received 11 ...
متن کاملQuantum dot semiconductor lasers with optical feedback
G. Huyet; 1, D. O’Brien1, S. P. Hegarty1, J. G. McInerney1, A. V. Uskov2, D. Bimberg3, C. Ribbat3, V. M. Ustinov4, A. E. Zhukov4, S. S. Mikhrin4, A. R. Kovsh4, J. K. White5, K. Hinzer5, and A. J. SpringThorpe6 1 Physics Department, National University of Ireland, University College Cork, Cork, Ireland 2 NMRC, National University of Ireland, University College Cork, Lee Malting, Cork, Ireland 3 ...
متن کاملTemperature-insensitive semiconductor quantum dot laser
Different approaches to the design of a genuinely temperature-insensitive quantum dot (QD) laser are proposed. Suppression of the parasitic recombination outside the QDs, which is the dominant source of the temperature dependence of the threshold current in the conventional design of a QD laser, is accomplished either by tunneling injection of carriers into the QDs or by band-gap engineering. E...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: POSITRON
سال: 2018
ISSN: 2549-936X,2301-4970
DOI: 10.26418/positron.v8i1.25505